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MOSFET

The metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET), also known as the metal–oxide–silicon transistor (MOS transistor, or MOS), is a type of insulated-gate field-effect transistor (IGFET) that is fabricated by the controlled oxidation of a semiconductor, typically silicon. The voltage of the covered gate determines the electrical conductivity of the device; this ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. The MOSFET was invented by Egyptian engineer Mohamed M. Atalla and Korean engineer Dawon Kahng at Bell Labs in November 1959. It is the basic building block of modern electronics, and the most frequently manufactured device in history, with an estimated total of 13 sextillion (1.3 × 10^22) MOSFETs manufactured between 1960 and 2018. The MOSFET is the most common semiconductor device in digital and analog circuits, and the most common power device. It was the first truly compact transistor that could be miniaturised and mass-produced for a wide range of uses, revolutionizing the electronics industry and the world economy, having been central to the computer revolution, digital revolution, information revolution, silicon age and information age. MOSFET scaling and miniaturization has been driving the rapid exponential growth of electronic semiconductor technology since the 1960s, and enable high-density integrated circuits (ICs) such as memory chips and microprocessors. The MOSFET is considered to be possibly the most important invention in electronics, as the "workhorse" of the electronics industry and the "base technology" of the late 20th to early 21st centuries, having revolutionized modern culture, economy, society and daily life.

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