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Toshiba Releases 3rd Generation 650V SiC Schottky Barrier Diodes that Contribute to More Efficient Industrial Equipment

Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has launched the “TRSxxx65H series,” the company’s third and latest[1] generation of silicon carbide (SiC) Schottky barrier diodes (SBDs) for industrial equipment. Volume shipments of the first 12 products, all 650V, start today, with seven products housed in TO-220-2L packages and five in DFN8×8 packages.

The new products use a new metal in a third generation SiC SBD chip that optimizes the junction barrier Schottky (JBS) structure[2] of the second generation products. They achieve industry-leading[3] low forward voltage of 1.2V (Typ.), 17% lower than the 1.45V (Typ.) of the previous generation. They also improve the trade-offs between forward voltage and total capacitive charge, and between forward voltage and reverse current, which reduces power dissipation and contributes to high efficiency of equipment.

- Switching power supplies
- EV charging stations
- Photovoltaic inverters

- Industry-leading[3] low forward voltage: VF=1.2V (Typ.) (IF=IF(DC))
- Low reverse current:
- TRS6E65H IR=1.1μA (Typ.) (VR=650V)
- Low total capacitive charge:
- TRS6E65H QC=17nC (Typ.) (VR=400V, f=1MHz)”

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