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“Toshiba Electronic Devices & Storage Corporation (“Toshiba”) today held a ceremony to mark the completion of a new 300-millimeter wafer fabrication facility for power semiconductors and an office building at Kaga Toshiba Electronics Corporation in Ishikawa Prefecture, Japan, one of Toshiba …
News Toshiba Launches 30V N-Channel Common-Drain MOSFET Suitable for Devices with USB and for Protecting Battery Packs
“Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has launched “SSM10N961L,” a low on-resistance, 30V N-channel common-drain MOSFET, suitable for devices with USB and for protecting battery packs. Shipments start today. Until now, Toshiba’s line-up of N-channel common-drain MOSFETs has focused …
News Toshiba Launches Small Photorelay Suitable for High-Frequency Signal Switches in Semiconductor Testers
“Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has launched “TLP3475W,” a photorelay in a small, thin WSON4 package. It reduces insertion loss and suppresses power attenuation in high-frequency signals [1] and is suitable for the pin electronics of semiconductor testers, which …
News Toshiba Expands Line-up of Thermoflagger™, a Simple Solution that Detects Temperature Rises in Electronic Equipment
“Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has expanded its line-up of “TCTH0xxxE series” Thermoflagger™ over-temperature detection ICs that can be used in a simple circuit with positive temperature coefficient (PTC) thermistors to detect temperature rises in electronic equipment. Shipments of …
News Toshiba Develops Industry’s First 2200V Dual Silicon Carbide (SiC) MOSFET Module That Contributes to High Efficiency and Downsizing of Industrial Equipment
“Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has developed “MG250YD2YMS3,” the industry’s first[1] 2200V dual silicon carbide (SiC) MOSFET module for industrial equipment. The new module has a drain current (DC) rating of 250A and uses the company’s …
News Toshiba Releases 3rd Generation SiC MOSFETs for Industrial Equipment with Four-Pin Package that Reduces Switching Loss
“Toshiba Electronic Devices & Storage Corporation (Toshiba) has launched silicon carbide (SiC) MOSFETs, the “TWxxxZxxxC series,” that use a four-pin TO-247-4L(X) package that reduces switching loss with the company’s latest[1] 3rd generation SiC MOSFETs chip for industrial …
“Toshiba Electronic Devices & Storage Corporation (”Toshiba”) has launched two 600V small intelligent power devices (IPD) for brushless DC motor drive applications such as air conditioners, air cleaners, and pumps. Volume shipments of “TPD4163F” and “TPD4164F,” which have output current (DC …
News Toshiba Launches Automotive 40V N-Channel Power MOSFETs with New Package that Contributes to High Heat Dissipation and Size Reduction of Automotive Equipment
“Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has launched two automotive 40V N-channel power MOSFETs, “XPJR6604PB” and “XPJ1R004PB,” that use Toshiba’s new S-TOGL™ (Small Transistor Outline Gull-wing Leads) package with U-MOS IX-H process chips. Volume shipments start …
News Toshiba Releases 3rd Generation 650V SiC Schottky Barrier Diodes that Contribute to More Efficient Industrial Equipment
“Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has launched the “TRSxxx65H series,” the company’s third and latest[1] generation of silicon carbide (SiC) Schottky barrier diodes (SBDs) for industrial equipment. Volume shipments of the first 12 products, all 650V, start …
News Toshiba Introduces ARM® Cortex®-M3 Microcontrollers “TXZ+™ Family Advanced Class” with 1MB Code Flash Memory Supporting Firmware Updates without Interrupting Microcontroller Operation
“Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has added new products “M3H group (2)” to the “M3H group” of the 32-bit microcontroller product group “TXZ+™ Family Advanced Class” equipped with Cortex®-M3 using the 40nm process. In recent years, the need …