“Researchers at North Carolina State University have developed a technique for converting positively charged (p-type) reduced graphene oxide (rGO) into negatively charged (n-type) rGO, creating a layered material that can be used to develop rGO-based transistors for use in electronic devices. “Graphene is extremely conductive, but is not a semiconductor; graphene oxide has a bandgap like a semiconductor, but does not conduct well at all so we created rGO,” says Jay Narayan, the John C. Fan Distinguished Chair Professor of Materials Science and Engineering at NC State and corresponding author of a paper describing the work. But rGO is p-type, and we needed to find a way to make n-type rGO. And now we have it for next-generation, two-dimensional electronic devices.”
Related Content
Related Posts:
- This advance could finally make graphene-based semiconductor chips feasible
- Researchers Find Way to Weld Metal Foam Without Melting Its Bubbles
- Researchers Show It’s Possible to Teach Old Magnetic Cilia New Tricks
- New Method Helps AI Navigate 3D Space Using 2D Images
- Self-Driving Cars Can Make Traffic Slower
- Robotic Grippers Offer Unprecedented Combo of Strength and Delicacy
- Researchers Create Highly Conductive Metallic Gel for 3D Printing
- Researchers Design Battery Prototype With Fiber-Shaped Cathode
- Robot Caterpillar Demonstrates New Approach to Locomotion for Soft Robotics
- ‘Butterfly Bot’ is Fastest Swimming Soft Robot Yet