“Since the advent of microelectronics in the mid-20th century, humanity has been on a nonstop sprint to eke more speed, power efficiency, and computational power from the sextillions (1021) of ever more miniaturized transistors that have come to underlie so much of the modern technoscape. Even so, the materials scientists, electrical engineers, and other specialists who are leading this decades-long advance know that astounding technological opportunities abound within both existing and yet-to-be-imagined semiconductor structures. When it comes to transistors that generate and receive radiofrequency (RF) and millimeter-wave signals—which are central in defense-relevant domains such as communications, signals intelligence, and electronic warfare—DARPA’s new Dynamic Range-enhanced Electronics and Materials (DREaM) program is designed to provide openings to these path-breaking advances.”
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