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Cypress expands energy-efficient line of nonvolatile RAMs

Cypress Semiconductor is sampling a 4-Mbit ferroelectric RAM (F-RAM), which is one of the industry’s highest density serial F-RAMs, featuring a 40-MHz serial peripheral interface (SPI) and a 2.0-V to 3.6-V operating voltage range. F-RAMs consume 200 times less energy than serial EEPROMs and 3000 times less energy than NOR flash devices. Further, Cypress F-RAMs are able to endure 100 trillion read/write cycles and provide 10-year data retention at 85C and 151 years at 65C.”

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