Infineon unveils 1200 V Silicon Carbide MOSFET technology for unprecedented efficiency and performance in power conversion designs

Infineon Technologies has unveiled a revolutionary silicon carbide (SiC) MOSFET technology allowing product designs to achieve previously unattainable levels of power density and performance. Infineon’s CoolSiC™ MOSFETs offer a new degree of flexibility for increasing efficiency and frequency. They will help developers of power conversion schemes to save space and weight, reduce cooling requirements, improve reliability and lower system costs.”